Exploration of the Potential Defects in GaN HEMTs - with Hyperspectrum Image Techniques

by Chen, Hsiang
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$80.99
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Chen, Hsiang Exploration of the Potential Defects in GaN HEMTs - with Hyperspectrum Image Techniques
Chen, Hsiang - Exploration of the Potential Defects in GaN HEMTs - with Hyperspectrum Image Techniques

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Description

What happens inside a GaN HEMT during device
operations? Usually,destructive measurements are
required to analyze the defect and the carrier
trapping - which are the two biggest reliabilty
issues in GaN electronics.The novel noninvasive
optical characterization techniques provided by this
book can visualize the potential defect and the
trapping region inside an operating GaN HEMT. The
techniques show promise for screening the device
failure.

Contributors

Author:
Chen, Hsiang

Further information

Biography Artist:
Hsiang Chen received the PhD degree in electrical engineering at
University of California, Irvine. He is a faculty member in the
electrical engineering department and the applied materials and
optoelectronic engineering department at National Chi Nan
University, Taiwan (R.O.C.).
Language:
English
Number of Pages:
148
Media Type:
Softcover
Publisher:
VDM Verlag Dr. Müller

Master Data

Product Type:
Paperback book
Package Dimensions:
0.218 x 0.15 x 0.01 m; 0.22 kg
GTIN:
09783639114157
DUIN:
RN9A9G26NL8
$80.99
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